Elimination of Single Event Latch-Up in the ATMEL ATMX150RHA Rad-Hard CMOS 150nm Cell-Based ASIC Family

Autor:	E. Leduc, F. Braud, D. Truyen
Rok vydání:	2015
Předmět:	Cmos soi Computer science business.industry Event (computing) Silicon on insulator Hardware_PERFORMANCEANDRELIABILITY Buried oxide CMOS Application-specific integrated circuit Embedded system Hardware_INTEGRATEDCIRCUITS business Hardware_LOGICDESIGN Cell based
Zdroj:	2015 15th European Conference on Radiation and Its Effects on Components and Systems (RADECS).
DOI:	10.1109/radecs.2015.7365608
Popis:	This paper presents a dual-deep-wells process option to completely eliminate the Single Event Latch-up (SEL)of the ATMEL 150nm CMOS SOI technology. TCAD simulations were performed to investigate the efficiency of this process option versus the doping concentration. The experiments show that the combination of the buried oxide and dual-deep-wells is an effectiveness technique to eliminate the SEL effect.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::4fb9ca32768f4b712843b311255363d1 https://doi.org/10.1109/radecs.2015.7365608 Zobrazit plný text záznamu