Optimization of WSi2 by SiH4 CVD: impact on oxide quality
| Autor: | Caterina Riva, Gabriella Ghidini, D. Brazzelli |
|---|---|
| Rok vydání: | 2001 |
| Předmět: |
Materials science
Transistor Oxide chemistry.chemical_element Nanotechnology Dielectric Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention chemistry.chemical_compound Reliability (semiconductor) chemistry law Thermal Fluorine Deposition (phase transition) Electrical and Electronic Engineering Composite material Safety Risk Reliability and Quality Layer (electronics) |
| Zdroj: | Microelectronics Reliability. 41:1003-1006 |
| ISSN: | 0026-2714 |
| Popis: | The deposition of WSi 2 on transistor gate in SiH 4 /WF 6 ambient produces strong variations into the active oxide layer, introducing a significant fluorine concentration into the dielectric. This phenomenon is here shown to have different effects on p-well and n-well structures and to strongly depend on thermal budget. Different amorphization implants after deposition may also be implemented to avoid cracks formations but they will be shown to interact with fluorine into the dielectric and strongly impact reliability performances. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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