Thermoelectric figure of merit of monopolar semiconductors with finite dimensions
| Autor: | V. S. Zakordonets, G. N. Logvinov |
|---|---|
| Rok vydání: | 1997 |
| Předmět: |
Materials science
Condensed matter physics Thermal reservoir Phonon Condensed Matter Physics Atomic and Molecular Physics and Optics Isothermal process Electronic Optical and Magnetic Materials Condensed Matter::Materials Science Johnson's figure of merit Condensed Matter::Superconductivity Relaxation (physics) Figure of merit Boundary value problem Adiabatic process |
| Zdroj: | Semiconductors. 31:265-267 |
| ISSN: | 1090-6479 1063-7826 |
| DOI: | 10.1134/1.1187123 |
| Popis: | The figure of merit of monopolar nondegenerate semiconductors is theoretically investigated. The difference between the electron and phonon temperatures, which arises as a result of the action of different surface mechanisms of energy relaxation at the contacts of the sample with the heat reservoir, is taken into account. It is shown in the case of isothermal boundary conditions for the electron subsystem and adiabatic conditions for the phonon subsystem that the thermoelectric figure of merit of the sample increases with decreasing sample’s linear dimensions and reaches its maximum in films of submicron thickness. |
| Databáze: | OpenAIRE |
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