GaN Power Transistors with Integrated Thermal Management

Autor:	Charles R. Eddy, Jennifer K. Hite, Marko J. Tadjer, Travis J. Anderson, Martin Kuball, David J. Meyer, Michael A. Mastro, Karl D. Hobart, Fritz J. Kub, Neeraj Nepal, Mario G. Ancona, Roland Baranyai, Bradford B. Pate, James W Pomeroy, Andrew D. Koehler, Tatyana I. Feygelson
Rok vydání:	2013
Předmět:	Engineering business.industry Electrical engineering Power semiconductor device Thermal management of electronic devices and systems business
Zdroj:	ECS Transactions. 58:279-286
ISSN:	1938-6737 1938-5862
DOI:	10.1149/05804.0279ecst
Popis:	The concept for and design/fabrication of a GaN power transistor with integrated thermal management is presented. Key elements of the design, including those supporting enhancement-mode operation, high breakdown voltages and low on-resistance are described in detail. The importance of surface preparation and growth of high-k gate dielectrics using atomic layer deposition is summarized. Aspects of barrier design and surface passivation to promote low access resistance including lattice matched barriers and novel low-temperature AlN passivations are discussed. Finally, the integration of nanocrystalline diamond coatings on both the top-side and the back-side of the device for thermal management are described. Initial performance assessments of each of these components, as measured in the device operation, are presented and future efforts are highlighted.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::4f82814e106d8216634ae070bc7a8e71 https://doi.org/10.1149/05804.0279ecst Zobrazit plný text záznamu