| Autor: |
Samia Subrina, Hasibul Sakib, Touhid Ahmed |
| Rok vydání: |
2018 |
| Předmět: |
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| Zdroj: |
2018 10th International Conference on Electrical and Computer Engineering (ICECE). |
| DOI: |
10.1109/icece.2018.8636776 |
| Popis: |
In this work the effects of uniaxial strain on the electronic properties of 2D monolayer SiGe have been investigated by means of first principle calculations within density functional theory (DFT). Monolayer SiGe, also known as siligene is a stable semimetal with Dirac cone at K point of the Brillouin zone (BZ) which combines superior properties of germanene and synthesis advantages of silicene. The study shows that uniaxial strain opens energy band gap at K point of siligene and increases almost linearly while remaining direct over wide range of compressive and tensile uniaxial strain. Direct to indirect and direct to metal transitions also occur when subjected to sufficient amount of strain. Calculation of the electron and hole effective mass as a function of strain reveals that linear band dispersion relation is preserved as the effective mass remains significantly small within the strained structures. Moreover the mechanism of the band gap tuning was analyzed with the help of charge distribution within the structure. Such study would be a pathway for siligene in the field of material science and electronic device industry. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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