Design Considerations for EUV Resist Materials

Autor:	James W. Thackeray, Su Jin Kang, Emad Aqad, Kathleen Spear-Alfonso
Rok vydání:	2009
Předmět:	Materials science Polymers and Plastics Resist Extreme ultraviolet lithography Organic Chemistry Materials Chemistry Nanotechnology Exposure latitude
Zdroj:	Journal of Photopolymer Science and Technology. 22:65-71
ISSN:	1349-6336 0914-9244
DOI:	10.2494/photopolymer.22.65
Popis:	This paper discusses the relative merits of traditional PAG blend resist approach vs a novel Polymer-bound PAG resist approach. In looking at EUV exposures it is shown that the Polymer-bound PAG approach possesses advantages in LWR and Resolution over a PAG blend resist approach. The Polymer-bound PAG approach achieves 25nm half pitch resolution with an LWR of 3.8nm and a photospeed of 10mJ. The Polymeric PAG approach also possesses higher exposure latitude vs a PAG blend resist. Although still maturing, it is felt that polymer-bound PAG-based resists will become quite useful at the 22nm node and below.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::4f806bb9f50cbe9c07b58fc29c716259 https://doi.org/10.2494/photopolymer.22.65 Zobrazit plný text záznamu