Effects of UV process on high density 1T1C fram device
| Autor: | S.Y. Lee, Young-woo Song, N. W. Jang, H. H. Kim, D. J. Jung, C. J. Kim, June Key Lee, Kinam Kim |
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| Rok vydání: | 2001 |
| Předmět: |
Materials science
business.industry Condensed Matter Physics medicine.disease_cause Ferroelectricity Ferroelectric capacitor Electronic Optical and Magnetic Materials law.invention Capacitor Control and Systems Engineering law Electrode Materials Chemistry Ceramics and Composites medicine Optoelectronics Static random-access memory Electrical and Electronic Engineering Polarization (electrochemistry) business Ultraviolet Dram |
| Zdroj: | Integrated Ferroelectrics. 39:51-59 |
| ISSN: | 1607-8489 1058-4587 |
| DOI: | 10.1080/10584580108011927 |
| Popis: | A ultraviolet (UV) process is commonly used in fabricating memory devices such as DRAM and SRAM without degrading the memory properties. However, in high density FRAM, the effect of UV light on ferroelectric properties has never been confirmed in real functional FRAM devices FRAM. Therefore, in this paper, we investigated the UV effect on ferroelectric properties and established an optimal back-end process for 1T1C 4Mb FRAM. It was found that the UV light illumination has strong influence on the hysteresis loop of ferroelectric capacitors. The polarization of the capacitor decreased and coercive voltage shifted after exposure to the UV light. It might be attributed to the fact that UV light generates free space charges in the ferroelectric layer and these charges are trapped at the electrode/ ferroelctric interface of the ferroelectric capacitor. |
| Databáze: | OpenAIRE |
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