Design of film supported single mesa Schottky diodes for above 1THz application with submicron T-junction

Autor:	Xiaoyu Liu, Yong Zhang, Jingtao Zhou, Haomiao Wei, Nan Wu, Zhi Jin, Bo Yan, Ruimin Xu
Rok vydání:	2022
Předmět:	Materials Chemistry Electrical and Electronic Engineering Condensed Matter Physics Electronic Optical and Magnetic Materials
Zdroj:	Semiconductor Science and Technology. 37:105017
ISSN:	1361-6641 0268-1242
DOI:	10.1088/1361-6641/ac8b2a
Popis:	A high-performance terahertz Schottky barrier diode (SBD) with a film-supported single mesa structure featuring a low structural parasitic with extremely low dielectric loss is reported in this brief. The fabricated substrate-free SBD is supported with a 2–3 µm polymer film using a low parasitic coupling capacitor of about 0.12 fF. It significantly reduces the electromagnetic coupling effect between the anode and cathode pads by 90% compared with the traditional structure of the same size. To reduce the Schottky junction capacitance at the anode, a submicron T-junction process is used with a low junction capacitance of 0.15 fF. The cutoff frequency calculated by the total capacitance of the diode is up to 4 THz. The substrate-free terahertz monolithic integration circuit based on this film-supported single mesa SBD has better performance in reducing the circuit dielectric loss, exhibiting a remarkable potential for high-frequency applications.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::4f72d0822136a95e09d7d0f6f589ed9b https://doi.org/10.1088/1361-6641/ac8b2a Zobrazit plný text záznamu