Study of Defects in p-type Layers in III-nitride Laser Diode Structures Grown by Molecular Beam Epitaxy

Autor:	P. M. F. J. Costa, Jonathan Heffernan, Colin J. Humphreys, Huixin Xiu, Matthias Kauer, Tim Michael Smeeton, Stewart Edward Hooper
Rok vydání:	2006
Předmět:	Materials science Laser diode business.industry Superlattice Heterojunction Nitride Cladding (fiber optics) law.invention Transmission electron microscopy law Optoelectronics business Lasing threshold Molecular beam epitaxy
Zdroj:	MRS Proceedings. 955
ISSN:	1946-4274 0272-9172
Popis:	This paper reports on the study of defects in p-type layers in III-nitride laser structures grown by molecular beam epitaxy. Characterization of the heterostructures was carried out using atomic force microscopy and transmission electron microscopy. The results show that a high density of extended defects – possibly inversion domains – exist in the p-type cladding layers of as-grown structures with either AlGaN/GaN superlattices or bulk AlGaN cladding layers. TEM analysis of operated and aged devices does not reveal any significant structural modification of the p-type material which might be the cause of deterioration in the lasing performance or failure.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::4f6c2e0d22eaa394b941fd967a7a619e https://doi.org/10.1557/proc-0955-i04-07 Zobrazit plný text záznamu Full text from SpringerLink