A SiC Trench MOSFET concept offering improved channel mobility and high reliability
| Autor: | Thomas Basler, Ralf Siemieniec, Thomas Aichinger, Romain Esteve, Wolfgang Bergner, Dethard Peters, Bernd Zippelius, Daniel Kück |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science business.industry 020208 electrical & electronic engineering Gate dielectric Electrical engineering 02 engineering and technology 01 natural sciences Die (integrated circuit) chemistry.chemical_compound Reliability (semiconductor) chemistry Gate oxide Logic gate 0103 physical sciences MOSFET 0202 electrical engineering electronic engineering information engineering Silicon carbide Power MOSFET business |
| Zdroj: | 2017 19th European Conference on Power Electronics and Applications (EPE'17 ECCE Europe). |
| Popis: | This work discusses the challenges in the design of a SiC Power MOSFET compared to their silicon-based relatives and describes a novel SiC Trench MOSFET concept. The most prominent difficulties being identified are related to the properties of the channel and the gate dielectric as well as their interface. Different approaches to realize a SiC MOSFET are briefly discussed and the CoolSiC™ MOSFET concept is introduced which balances low conduction losses with an IGBT-like reliability. Long term gate oxide tests reveal that the extrinsic failure rate can be confidently predicted to be less than 1 FIT per die in 20 years under specified use conditions for industrial applications. |
| Databáze: | OpenAIRE |
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