| Autor: |
James S. Clarke, M. Harmes, Mona Mayeh, Hazel Lang, Hui Jae Yoo, Naskar Sudipto, Seung Hoon Sung, Bojarski Stephanie A, John J. Plombon, Colin T. Carver, Kevin L. Lin, Manish Chandhok, B. Krist, Jasmeet S. Chawla |
| Rok vydání: |
2015 |
| Předmět: |
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| Zdroj: |
2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM). |
| Popis: |
Nickel silicide is an attractive option for interconnects at small dimensions because of its short electron mean free path and good electromigration behavior. Nickel silicide interconnects can be integrated using either a subtractive or damascene process. Precise control of final metal composition ratio is important for obtaining low resistivity, as shown in thin-film and patterned structure measurements. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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