Compound Semiconductor Materials for Microwave Devises

Autor:	Hiroyuki Kamogawa, Yohei Otoki
Rok vydání:	2004
Předmět:	Materials science business.industry Optoelectronics Compound semiconductor New materials Wafer Metalorganic vapour phase epitaxy Electrical and Electronic Engineering business Microwave
Zdroj:	IEEJ Transactions on Electronics, Information and Systems. 124:270-276
ISSN:	1348-8155 0385-4221
Popis:	Mass production technology and new developments in Compound Semiconductor material for Microwave devices are here described. Semi-insulating GaAs was used for Microwave devices from the 1980s. Progress of Epi-taxial technology has enabled higher performance of these devices. Epi-wafers for HEMTs and HBTs are grown by MOVPE and MBE in mass production. Controllability of the growth and improvement of through-put have been carried out in both methods. Quality improvement of conventional technology is still important on a real stage for the next generation devices. The new materials, such as Metamorphic Wafers, InP related material and GaN-HEMT have been developed and are showing high performance. Compound Semiconductors will contribute significantly to the future of Microwave devices.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::4f4faa9df7463159ac263e150f277954 https://doi.org/10.1541/ieejeiss.124.270 Zobrazit plný text záznamu