Effects of annealing on CeO2-based flash memories
| Autor: | Shang-Ren Lin, Chian You Chen, Hsiang Chen, Chyuan Haur Kao, Yun-Yang He, Kun-Min Hsieh, Min-Han Lin, Sheng-Hao Hung, Su Zhien Chen |
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| Rok vydání: | 2015 |
| Předmět: |
Hardware_MEMORYSTRUCTURES
Materials science business.industry Annealing (metallurgy) Oxide Trapping Condensed Matter Physics Memory performance Flash memory Surfaces Coatings and Films law.invention chemistry.chemical_compound chemistry law Memory window Optoelectronics Crystallization business Instrumentation |
| Zdroj: | Vacuum. 118:69-73 |
| ISSN: | 0042-207X |
| DOI: | 10.1016/j.vacuum.2015.01.024 |
| Popis: | In this study, CeO2 was used as a trapping layer in metal oxide high-K-oxide-Si (MOHOS)-type memory devices. This trapping layer underwent annealing to enhance memory performance. Multiple material analyses indicate that annealing enables enhanced crystallization and suppresses silicate formation. MOHOS-type flash memory devices incorporating a CeO2 charge trapping layer annealed at 950 °C exhibited a large memory window of 4.7 V, as well as a fast program and erase speed. Our research indicates that MOHOS-type memory devices utilizing CeO2 show great promise for future industrial flash memory applications. |
| Databáze: | OpenAIRE |
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