Comparison of F 2‐Based Gases for High‐Rate Dry Etching of Si
| Autor: | Y. B. Hahn, D. Johnson, D. C. Hays, Randy J. Shul, J. Donahue, Eric Lambers, K. B. Jung, S. J. Pearton |
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| Rok vydání: | 1999 |
| Předmět: |
Plasma etching
Silicon Renewable Energy Sustainability and the Environment Analytical chemistry chemistry.chemical_element Plasma Condensed Matter Physics Microstructure Dissociation (chemistry) Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry Materials Chemistry Electrochemistry Dry etching Bond energy Inductively coupled plasma |
| Zdroj: | Journal of The Electrochemical Society. 146:3812-3816 |
| ISSN: | 1945-7111 0013-4651 |
| DOI: | 10.1149/1.1392556 |
| Popis: | Four different F{sub 2}-based gases (SF{sub 6}, NF{sub 3}, PF{sub 5}, and BF{sub 3}) were examined for high rate Inductively Coupled Plasma etching of Si. Etch rates up to {approximately}8 {micro}m/min were achieved with pure SF{sub 6} discharges at high source power (1500W) and pressure (35mTorr). A direct comparison of the four feedstock gases under the same plasma conditions showed the Si etch rate to increase in the order BF{sub 3} < NF{sub 3} < PF{sub 5} < SF{sub 6}. This is in good correlation with the average bond energies of the gases, except for NF{sub 3}, which is the least strongly bound. Optical emission spectroscopy showed that the ICP source efficiently dissociated NF{sub 3}, but the etched Si surface morphologies were significantly worse with this gas than with the other 3 gases. |
| Databáze: | OpenAIRE |
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