0.5-2.5 GHz, 10W MMIC Power Amplifier in GaN HEMT Technology

Autor:	M. J. Poulton, K. Krishnamurthy, D. S. Green, J. Martin, R. Vetury
Rok vydání:	2009
Předmět:	Materials science business.industry Amplifier RF power amplifier Electrical engineering Gallium nitride High-electron-mobility transistor chemistry.chemical_compound chemistry Broadband Linear amplifier Optoelectronics Wideband business Monolithic microwave integrated circuit
Zdroj:	2009 Annual IEEE Compound Semiconductor Integrated Circuit Symposium.
DOI:	10.1109/csics.2009.5315739
Popis:	We report a broadband lossy matched GaN on SiC HEMT power amplifier MMIC with 15dB gain, 0.5-2.5 GHz bandwidth, 9-13.6 W CW output power and 44.9-63.6% drain efficiency over the band. The amplifier operates from a 48V drain supply and is packaged in a ceramic SO8 package. These amplifiers are intended for use in wideband digital communication applications.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::4f3df657410eec6f1dbdcdd6f48fb942 https://doi.org/10.1109/csics.2009.5315739 Zobrazit plný text záznamu