1.2 kV SiC MOSFET Full-Bridge Power Module with Integrated Gate Driver and Coupled Inductor

Autor:	Jack Knoll, Jesi Miranda-Santos, Xingyu Chen, Christina DiMarino, Qiang Li
Rok vydání:	2022
Zdroj:	2022 IEEE Energy Conversion Congress and Exposition (ECCE).
DOI:	10.1109/ecce50734.2022.9947473
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::4f31765b161425f5f2a8c35b962237cb https://doi.org/10.1109/ecce50734.2022.9947473 Zobrazit plný text záznamu