Nonlinear absorption in a Cr4+: Gd2SiO5crystal subjected to picosecond excitation
| Autor: | B I Minkov, Konstantin Yumashev, N. V. Kuleshov, S P Zhmako, P. V. Prokoshin, V. G. Shcherbitskii, V. P. Mikhailov |
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| Rok vydání: | 1995 |
| Předmět: |
Materials science
Extended X-ray absorption fine structure Statistical and Nonlinear Physics Two-photon absorption Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Picosecond Excited state Ultrafast laser spectroscopy Electrical and Electronic Engineering Atomic physics Luminescence Absorption (electromagnetic radiation) Ground state |
| Zdroj: | Quantum Electronics. 25:628-632 |
| ISSN: | 1468-4799 1063-7818 |
| DOI: | 10.1070/qe1995v025n07abeh000431 |
| Popis: | The optical absorption, temperature dependences of the luminescence intensity and decay time, and the transient absorption spectra of a Cr4+ : Gd2SiO5 crystal were determined by the picosecond excitation and probing method. An analysis of the results showed that the induced absorption observed in the 600–650 nm range was due to 3T2(3F) → 3T1(3P) transitions from the excited state. The lifetimes of the 3T2(3F) and 3T1(3F) levels were estimated to be 15 ns and 12 ps, respectively. The cross section for absorption from the first excited state at the wavelength of 616 nm was (1.1 ± 0.6)×10-18 cm2 and that for absorption from the ground state at λ = 540 nm was (2.2 ± 1.1)×10-18 cm2. |
| Databáze: | OpenAIRE |
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