Growth and characterization of PdO films obtained by thermal oxidation of nanometric Pd films by electroless deposition technique
| Autor: | R. Pena-Sierra, G. Romero-Paredes, C. López-Rodríguez, J. A. Andraca-Adame, O. Garcia-Serrano |
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| Rok vydání: | 2010 |
| Předmět: |
Thermal oxidation
Materials science Aqueous solution Silicon Mechanical Engineering Inorganic chemistry chemistry.chemical_element Condensed Matter Physics Semimetal symbols.namesake Van der Pauw method chemistry Chemical engineering Mechanics of Materials X-ray crystallography symbols General Materials Science Raman spectroscopy Deposition (law) |
| Zdroj: | Materials Science and Engineering: B. 174:273-278 |
| ISSN: | 0921-5107 |
| DOI: | 10.1016/j.mseb.2010.03.064 |
| Popis: | Structural and electrical characterization of palladium oxide (PdO) films grown by thermal oxidation of nanometric Pd films is reported. Pd films were deposited on n-type silicon (1 1 1) substrates by the electroless deposition technique (EDT) in a PdCl 2 –HF aqueous solution. The growth rate and the structural properties of PdO films were characterized using X-ray diffraction and Raman spectroscopy techniques. The electrical properties of the PdO films were measured by the van der Pauw method. The PdO films resulted p-type with a hole concentration of 10 20 cm −3 and mobility in the range of 2–32 cm 2 /V s. |
| Databáze: | OpenAIRE |
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