Physics based analytic model for C–V characteristics of GaAs planar Schottky diodes
| Autor: | Tian Tong, Lin Jinting, Luo Jinsheng |
|---|---|
| Rok vydání: | 1998 |
| Předmět: |
Materials science
Equivalent series resistance business.industry Schottky diode Condensed Matter Physics Capacitance Electronic Optical and Magnetic Materials Anode Ion implantation Planar Materials Chemistry Electronic engineering Optoelectronics MESFET Electrical and Electronic Engineering business Monolithic microwave integrated circuit |
| Zdroj: | Solid-State Electronics. 42:458-462 |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/s0038-1101(97)00218-9 |
| Popis: | In this paper, we present a novel physics based analytic model for C–V characteristics of planar Schottky diodes made by a GaAs MESFET process and used in GaAs MMIC. The model focuses on small dimensions, planar technology and ion implantation technology, and attends to the influence of side-wall capacitance and channel series resistance beneath anode on the C–V characteristics of planar Schottky diodes. Those influences affect the characteristics of planar Schottky diodes, but were omitted in other models or were paid little attention to. In the paper a calculation example using our model and a comparison between presented model and some other models is given. The calculation result is in good agreement with the measured result, and reveals that the parameters involved in the presented model are easy to be determined. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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