A circuit macromodel of high voltage LDMOS based on numerical simulation
| Autor: | Ke Dao-Ming, Wu Xiulong, Chen Jun-ning, Gao Shan, Liu Qi |
|---|---|
| Rok vydání: | 2005 |
| Předmět: |
LDMOS
Engineering business.industry Electrical engineering High voltage Hardware_PERFORMANCEANDRELIABILITY Integrated circuit law.invention Computer Science::Hardware Architecture Computer Science::Emerging Technologies law MOSFET Hardware_INTEGRATEDCIRCUITS Electronic engineering Equivalent circuit Power MOSFET business Hardware_LOGICDESIGN Voltage Electronic circuit |
| Zdroj: | Proceedings of 2005 IEEE International Workshop on VLSI Design and Video Technology, 2005.. |
| DOI: | 10.1109/iwvdvt.2005.1504558 |
| Popis: | Lateral double-diffused MOSFET (LDMOS) is widely used in power integrated circuits and microwave integrated circuits. So creating equivalent circuit of LDMOS is becoming more important. The previous models divided the on-state region of LDMOS into two parts, linear region and saturation region. The formulas and equivalent circuits are very complicated. This paper presents an I-V equation that is available in the whole on-state region by numerical simulation, and creates a macromodel of LDMOS circuits. The model contains fewer parameters that are easily extracted. Then we obtain a simpler equivalent circuit. Convergence becomes easier when using this equivalent circuit to simulate power integrated circuits. In the end, we give an application of our model. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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