Quantitative description of the properties of extended defects in silicon by means of electron- and laser-beam-induced currents
| Autor: | Ya. L. Shabel’nikova, D. P. Nikolaev, Eugene B. Yakimov, M. V. Chukalina |
|---|---|
| Rok vydání: | 2015 |
| Předmět: |
Materials science
Silicon business.industry food and beverages chemistry.chemical_element Electron Condensed Matter Physics Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials law.invention Optics chemistry law Solar cell Cathode ray Wafer Grain boundary Diffusion (business) Electric current business |
| Zdroj: | Semiconductors. 49:741-745 |
| ISSN: | 1090-6479 1063-7826 |
| DOI: | 10.1134/s1063782615060226 |
| Popis: | A solar cell on a wafer of multicrystalline silicon containing grain boundaries was studied by the induced-current method. The sample was scanned by an electron beam and by a laser beam at two wavelengths (980 and 635 nm). The recorded induced-current maps were aligned by means of a specially developed code, that enabled to analyze the same part of the grain boundary for three types of measurements. Optimization of the residual between simulated induced-current profiles and those obtained experimentally yielded quantitative estimates of the characteristics of a sample and its defects: the diffusion length of minority carriers and recombination velocity at the grain boundary. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|