Study of heterostructures according to single-crystal X-ray diffractometry
| Autor: | K. L. Enisherlova, A. V. Lyutsau, M. M. Krymko, I. I. Razgulyaev, E. M. Temper |
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| Rok vydání: | 2013 |
| Předmět: |
Diffraction
Materials science business.industry Physics::Optics Bragg's law Heterojunction Crystal structure Condensed Matter Physics Electronic Optical and Magnetic Materials Crystal Condensed Matter::Materials Science Optics Materials Chemistry Electrical and Electronic Engineering business Single crystal Beam (structure) Diffractometer |
| Zdroj: | Russian Microelectronics. 42:517-524 |
| ISSN: | 1608-3415 1063-7397 |
| DOI: | 10.1134/s1063739713080106 |
| Popis: | Opportunities of the use of an XMD-300 diffractometer in three mapping schemes have been considered, namely, grazing primary beam, grazing diffracted beam, and the θ-2θ scheme, for the study of crystal perfection of semiconductor heterostructures (silicon-on-sapphire, silicon-on-insulator, ion-doped silica layers, and AlGaN/GaN/Si structures). It has been shown that the measurements with the use of three schemes in scattered radiation and in the exact performance of Bragg diffraction condition enable one to obtain a fringe pattern of diffraction simultaneously from crystal lattices of several layers of the heterostructure and interference peaks of maximum intensity for each individual layer. |
| Databáze: | OpenAIRE |
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