Sub-10nm resolution after lift-off using HSQ/PMMA double layer resist
| Autor: | Alexandre Dmitriev, Valentina Bonanni, Marcus Rommel, Bengt E. W. Nilsson, Jürgen Weis, Piotr Jedrasik |
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| Rok vydání: | 2013 |
| Předmět: |
Materials science
Hydrogen business.industry Oxide chemistry.chemical_element Nanotechnology Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Lift (force) chemistry.chemical_compound Hydrofluoric acid chemistry Resist Optoelectronics Dry etching Electrical and Electronic Engineering business Electron-beam lithography Plasmon |
| Zdroj: | Microelectronic Engineering. 110:123-125 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/j.mee.2013.02.101 |
| Popis: | Hydrogen silesquioxan (HSQ) is a well-investigated negative tone inorganic resist [1,2] which is known for its capabilities for high resolution electron beam lithography (EBL) and its stability against dry etching [3]. In this paper, we introduce a process to create dense structures by EBL utilizing a layer of poly-methyl-methacrylate (PMMA) as sacrificial layer beneath a HSQ layer. The sacrificial layer allows a simple lift-off process to remove the HSQ with organic solvents and thus avoids the use of hydrofluoric acid (HF) containing etchants, which is the commonly used HSQ remover [4]. The described double layer resist system allows patterning on substrates that are not HF compatible such as glass or oxide compounds, achieving a high resolution down to the sub-10nm regime. Despite the use of a double layer resist, this process is applicable for arbitrarily large areas due to the remaining PMMA underneath the HSQ and the avoidance of undercuts. |
| Databáze: | OpenAIRE |
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