Photovoltaic Properties and Series Resistance of p-Type Si/Intrinsic Si/n-Type Nanocrystalline FeSi2 Heterojunctions Created by Utilizing Facing-Targets Direct-Current Sputtering
| Autor: | Peerasil Charoenyuenyao, Tomohiro Nogami, Adison Nopparuchikun, Nathaporn Promros, Weerasaruth Kaenrai, Thanachai Changcharoen, Rawiwan Chaleawpong, Phongsaphak Sittimart, Tsuyoshi Yoshitake |
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| Rok vydání: | 2019 |
| Předmět: |
Materials science
Equivalent series resistance business.industry Direct current Photovoltaic system Energy conversion efficiency Biomedical Engineering Bioengineering Heterojunction 02 engineering and technology General Chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics Nanocrystalline material Sputtering Optoelectronics General Materials Science 0210 nano-technology business Voltage |
| Zdroj: | Journal of Nanoscience and Nanotechnology. 19:1445-1450 |
| ISSN: | 1533-4880 |
| DOI: | 10.1166/jnn.2019.16234 |
| Popis: | p-Type Si/intrinsic Si/n-type nanocrystalline iron disilicide heterojunctions were created by utilizing facing targets direct-current sputtering at the pressure of 1.33×10-1 Pa that investigated the photovoltaic properties. They exhibited a large leakage current and a small energy conversion efficiency of 0.62%. From using the method of Nicollian and Brews, the series resistance (Rs) values at zero bias voltage were 7.40 Ω at 2 MHz and 7.57 Ω at 50 kHz, respectively, which were in agreement with that estimated by the means of Norde. From applying the method of Hill-Coleman, the interface state density (nss) values were 3.15×1015 cm-2 eV-1 at 50 kHz and 8.93×1013 cm-2 eV-1 at 2 MHz. The obtained results revealed the presence of Rs and nss at the junction interface, which should be the potential cause of spoiled photovoltaic performance in the heterojunctions. |
| Databáze: | OpenAIRE |
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