| Autor: |
Tseng Chien-Hsien, Chin-Hsin Lo, Shou-Gwo Wuu, C.H. Yu, Ho-Ching Chien, Chia-Shiung Tsai, Tzu-Hsuan Hsu, Jieh-Jang Chen, Jeng-Shyan Lin, Dun-Nian Yaung, C.S. Wang |
| Rok vydání: |
2004 |
| Předmět: |
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| Zdroj: |
IEEE International Electron Devices Meeting 2003. |
| DOI: |
10.1109/iedm.2003.1269308 |
| Popis: |
An air-gap guard ring around the pixel sensor, to improve pixel sensitivity and crosstalk, in 0.18 /spl mu/m CMOS image sensor technology has been successfully developed. By using the RI (refractive index) difference between the air gap (RI/spl sim/1) and dielectric films (RI=1.4/spl sim/1.6), the major incident light is collected in the targeted pixel due to the total internal reflection occurred in the air-gap/dielectric-film interface. The small pixel pitch of 2.8 /spl mu/m/spl sim/4.0 /spl mu/m has been characterized and demonstrates excellent optical performance. For a 3.0 /spl mu/m pixel, the pixel sensitivity shows 45% enhancement and optical spatial crosstalk achieves 90% reduction at 20/spl deg/ incident angle. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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