Evolution of reverse recovery in trench MOSFETs
| Autor: | U. Medic, A. Ferrara, R. Siemieniec, Oliver Blank, Michael Hutzler, Timothy D. Henson |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science Trench mosfet business.industry 020208 electrical & electronic engineering Charge (physics) 02 engineering and technology 01 natural sciences Capacitance 0103 physical sciences Trench 0202 electrical engineering electronic engineering information engineering Optoelectronics Power MOSFET Reverse recovery business |
| Zdroj: | 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD). |
| DOI: | 10.1109/ispsd46842.2020.9170155 |
| Popis: | The interaction between the reverse recovery charge and the output charge in trench power MOSFETs is discussed. As the trade-off between the on-resistance and the gate charge improves, the output capacitance has more impact on the reverse recovery losses. The evolution of reverse recovery with trench technology is investigated by double-pulse measurements and TCAD simulations. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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