High-energy Proton Irradiated Few Layer Graphene Devices
| Autor: | 김지현 ( Ji Hyun Kim ), 김홍렬 ( Hong Yeol Kim ) |
|---|---|
| Rok vydání: | 2011 |
| Předmět: |
Electron mobility
Materials science Dopant Proton Graphene General Chemical Engineering chemistry.chemical_element Photochemistry Fluence Oxygen law.invention Condensed Matter::Materials Science chemistry law Desorption Physics::Atomic and Molecular Clusters Physics::Chemical Physics Atomic physics Nuclear Experiment Layer (electronics) |
| Zdroj: | Korean Chemical Engineering Research. 49:297-300 |
| ISSN: | 0304-128X |
| DOI: | 10.9713/kcer.2011.49.3.297 |
| Popis: | High energy proton irradiations were performed on graphene devices to increase the number of defects intentionally. Proton energy and fluence were 6 MeV and , respectively. The defects in few layer graphene layer created by proton irradiations captured oxygen molecules that acted as p-type dopants. After the vacuum annealing, hole mobility was enhanced by the recovery of the defects and the desorption of the oxygen molecules. However, the drain current decreased after vacuum annealing due to the removal of the dopant molecules. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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