Studying the morphology of hemispherical-grain polycrystalline silicon films

Autor:	A. V. Novak, Yu. V. Nikol’skii, S. N. Fokichev
Rok vydání:	2012
Předmět:	Mean square Morphology (linguistics) Polycrystalline silicon Materials science Physics and Astronomy (miscellaneous) Atomic force microscopy engineering food and beverages Surface finish Chemical vapor deposition Composite material engineering.material Deposition temperature
Zdroj:	Technical Physics Letters. 38:732-735
ISSN:	1090-6533 1063-7850
DOI:	10.1134/s1063785012080202
Popis:	The effect of the deposition temperature on the morphology of hemispherical-grain polycrystalline silicon (HSG-Si) films obtained by low-pressure chemical vapor deposition (LPCVD) has been studied using atomic force microscopy. The dependences of the relative surface area increment, density of grains, average height and lateral size of grains, mean square roughness, and correlation length on the deposition temperature have been determined in an interval used for the LPCVD growth of HSG-Si films.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::4ec10612be8c037118629c7979317e21 https://doi.org/10.1134/s1063785012080202 Zobrazit plný text záznamu Plný text ve formátu PDF