Surface reaction between water cluster ion and silicon substrate

Autor:	Gikan H. Takaoka, Hiromichi Ryuto, Gaku Ichihashi, Mitsuaki Takeuchi
Rok vydání:	2013
Předmět:	Nuclear and High Energy Physics Materials science Silicon Ion beam Physics::Instrumentation and Detectors Analytical chemistry chemistry.chemical_element Substrate (electronics) Ion Contact angle chemistry Physics::Plasma Physics Sputtering Water cluster Irradiation Atomic physics Instrumentation
Zdroj:	Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 315:227-230
ISSN:	0168-583X
DOI:	10.1016/j.nimb.2013.05.083
Popis:	The surface reaction between water cluster ions and Si substrates was investigated. The incident angle dependence of the sputtering yield of Si induced by the irradiation of a water cluster ion beam was measured at the acceleration voltage of 6 kV. The mean cluster size was 6.3 × 103 molecules. The sputtering yield of Si relative to that of normal incidence had a broad peak around the incident angle of 50°. The Si surface irradiated with a water cluster ion beam at the incident angle of 0° was more strongly oxidized than that irradiated at the incident angle of 50°. The contact angle of the Si surface irradiated with a water cluster ion beam decreased when the water cluster ion beam was irradiated at 0°, but increased at larger angles. The substrate temperature dependences of the sputter depth and numbers of disordered atoms in Si substrates indicated the limited contribution of water molecules that adsorbed on the Si surfaces to the sputtering and oxidation of the Si surfaces.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::4eb0d93ba546fa3788ab6cd383d37924 https://doi.org/10.1016/j.nimb.2013.05.083 Zobrazit plný text záznamu Full Text from ScienceDirect