Photoelectron diffraction study on the polarity of GaN surface

Autor:	Li Yong-Hua, K. Yibulaxin, Liu Feng-Qin, Xu Peng-Shou, Deng Rui, Pan Hai-Bin, Xie Chang-Kun, Xu Fa-Qiang
Rok vydání:	2004
Předmět:	Diffraction Crystallography Materials science X-ray photoelectron spectroscopy Polarity (physics) Secondary emission X-ray crystallography General Physics and Astronomy Nitride Spectroscopy Electron spectroscopy
Zdroj:	Acta Physica Sinica. 53:1171
ISSN:	1000-3290
DOI:	10.7498/aps.53.1171
Popis:	We have obtained the photoelectron diffraction curves from (1010) and (1120) crystal planes on GaN(0001) surface by using a polar scan mode of x-ray photoelectron diffraction (XPD). On the basis of principle of “forward focusing" of XPD, we have determined that its polarity is Ga termination. The polarity of GaN(0001) surface is also studied by using energy dependence photoelectron diffraction called angle-resolved photoemission extended fine structure, as well as the calculation of multiple scattering cluster models, which confirmed that its polarity is Ga termination.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::4ea53a959a6bfa9be5da182005455cab https://doi.org/10.7498/aps.53.1171 Zobrazit plný text záznamu