A Generalized SiGe HBT Single-Event Effects Model for On-Orbit Event Rate Calculations
| Autor: | Ronald D. Schrimpf, Akil K. Sutton, R. Krithivasan, Brian D. Sierawski, Marcus H. Mendenhall, Robert A. Reed, Kevin M. Warren, Guofu Niu, Cheryl J. Marshall, M.A. Carts, Paul W. Marshall, Robert A. Weller, Jonathan A. Pellish, John D. Cressler |
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| Rok vydání: | 2007 |
| Předmět: |
Physics
Nuclear and High Energy Physics Heterojunction bipolar transistor Geosynchronous orbit Integrated circuit BiCMOS Upset Computational physics law.invention Nuclear Energy and Engineering law Single event upset Electronic engineering Orbit (dynamics) Electrical and Electronic Engineering Nuclear Experiment Event (particle physics) |
| Zdroj: | IEEE Transactions on Nuclear Science. 54:2322-2329 |
| ISSN: | 0018-9499 |
| Popis: | This work draws on experimental and simulation results to derive a generalized SEU response model for bulk SiGe HBTs. The model was validated using published heavy ion and new proton data gathered from high-speed HBT digital logic integrated circuits fabricated in the IBM 5AM SiGe BiCMOS process. Calibrating to heavy ion data was sufficient to reproduce the proton data without further adjustment. The validated model is used to calculate upset event rates for low-earth and geosynchronous orbits under typical conditions. |
| Databáze: | OpenAIRE |
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