Simulation and comparison of capacitance voltage characteristics due to the effect of varying temperatures for MOS quantum dot device configurations in Al/Pbse/ZnO/Si and Al/Pbte/ZnO/Si

Autor:	Naga Anudeep Gayala, Cyril Robinson Azariah John Chelliah
Rok vydání:	2023
Zdroj:	AIP Conference Proceedings.
ISSN:	0094-243X
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::4e9eb6a573965edca84875814e553b4f https://doi.org/10.1063/5.0116614 Zobrazit plný text záznamu