Simulation and comparison of capacitance voltage characteristics due to the effect of varying temperatures for MOS quantum dot device configurations in Al/Pbse/ZnO/Si and Al/Pbte/ZnO/Si
Autor: | Naga Anudeep Gayala, Cyril Robinson Azariah John Chelliah |
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Rok vydání: | 2023 |
Zdroj: | AIP Conference Proceedings. |
ISSN: | 0094-243X |
Databáze: | OpenAIRE |
Externí odkaz: |