1.5‐μm GaInAsP planar buried heterostructure lasers grown using chemical‐beam‐epitaxial base structures

Autor:	E. G. Burkhardt, Y. Twu, Niloy K. Dutta, T.M. Shen, John E. Bowers, S. G. Napholtz, Daniel Paul Wilt, Won-Tien Tsang, R. A. Logan, J. A. Ditzenberger
Rok vydání:	1988
Předmět:	Materials science Relative intensity noise business.industry General Physics and Astronomy Biasing Heterojunction Semiconductor device Epitaxy Laser Semiconductor laser theory law.invention law Optoelectronics Quantum efficiency business
Zdroj:	Journal of Applied Physics. 63:1218-1220
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.339984
Popis:	GaInAsP/InP double heterostructures grown by chemical‐beam epitaxy have been used in conjunction with liquid‐phase‐epitaxial regrowth to fabricate high‐performance buried heterostructure lasers operating at a wavelength of 1.5 μm. These lasers show room‐temperature threshold currents as low as 12 mA, external quantum efficiencies as high as 0.2 mW/mA per facet, and, in general, linear output power up to ∼10 mW/facet. The 3‐dB bandwidth at optimal biasing is about 8 GHz and is believed to be limited by the heatsink stud. The relative intensity noise is low
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::4e99ba1ebca8bfba7371e3ef3d2f8316 https://doi.org/10.1063/1.339984 Zobrazit plný text záznamu