Growth of GaN-based nanorod heterostructures (core-shell) for optoelectronics and their nanocharacterization
| Autor: | Joël Eymery, D. Le Si Dang |
|---|---|
| Rok vydání: | 2015 |
| Předmět: |
010302 applied physics
Materials science business.industry Nanowire Physics::Optics Nanotechnology Heterojunction 02 engineering and technology 021001 nanoscience & nanotechnology Epitaxy 01 natural sciences law.invention Condensed Matter::Materials Science Solid-state lighting law 0103 physical sciences Optoelectronics Electrical measurements Nanorod Metalorganic vapour phase epitaxy 0210 nano-technology business Light-emitting diode |
| Popis: | In recent years, the nanorod technology has emerged as a very promising alternative to high efficiency optoelectronics devices. In this chapter, we discuss potential advantages of the one-dimensional geometry as compared to its planar counterpart for solid-state lighting. We review recent progress in growth by metal-organic vapor phase epitaxy of core-shell InGaN multi-quantum-well heterostructures, and their nano-characterization through cross correlation analysis of structural, optical, transport, and electrical measurements. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|