| Autor: |
null Khabibullin R. A., null Zhmud B. A., null Spirin K. E., null Ponomarev D. S., null Glinskiy I. A., null Maytama M. V., null Pavlov A. Yu., null Sobolev A. S. |
| Rok vydání: |
2023 |
| Zdroj: |
Technical Physics Letters. 49:55 |
| ISSN: |
1726-7471 |
| DOI: |
10.21883/tpl.2023.01.55350.19395 |
| Popis: |
Double-barrier GaAs/AlAs resonant tunneling diodes (RTDs) have become the promising elements for the development of sub-mm and THz emitters. We report on the fabrication of the RTD samples that were characterized via RF-reflectometry to determine the parameters of its equivalent circuit. By using numerical simulation we show that the coplanar transmission line with the RTD under study provides an amplification up to 8 GHz. Keywords: Resonant tunneling diodes, active microstrip transmission lines, distributed emitters, diodes with double metal contacts. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
|
