Designing a Heterojunction N+ on P GaSb Thermophotovoltaic Cell with hydrogenated Amorphous Silicon Interface Passivation
| Autor: | Lewis Fraas, Yi Zhang, Liangliang Tang |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Amorphous silicon Electron mobility Materials science Passivation business.industry Heterojunction 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences chemistry.chemical_compound chemistry Thermophotovoltaic 0103 physical sciences Optoelectronics Quantum efficiency 0210 nano-technology business Transparent conducting film Power density |
| Zdroj: | 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC). |
| DOI: | 10.1109/pvsc.2018.8548044 |
| Popis: | An optimized design of a Heterojunction N+ on P GaSb thermophotovoltaic (TPV) cell with hydrogenated amorphous silicon interface passivation is presented. The N+ layer is a transparent conductive oxide (TCO). The interface recombination rate between the p-GaSb and a-Si:H(i) layers is found to have an important effect on cell performance. If this recombination rate can be reduced to 105cm/s, the internal quantum efficiency in the wave range of 600 1700 nm surpasses 95% and the output power density reaches 2W/cm2 under a given blackbody radiation of 1500K. The high minority carrier electron mobility and diffusion length in the p-GaSb leads to the high internal quantum efficiency. A potential advantage of this cell is its simple cell fabrication process for low cost in high volume manufacturing. Another advantage for this cell for TPV systems is a built in short pass plasma filter with a high reflectivity at longer wavelengths. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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