Controlled Layer-by-Layer Etching of MoS2

Autor:	Lin Taizhe, Min-Hwan Jeon, Sehan Lee, Craig Huffman, Jin Yong Lee, Kyong-nam Kim, Baotao Kang, Wei Han, JeaHoo Jeon, Sungjoo Lee, Geun Young Yeom
Rok vydání:	2015
Předmět:	Materials science Layer by layer Analytical chemistry symbols.namesake chemistry.chemical_compound Adsorption X-ray photoelectron spectroscopy chemistry Desorption Monolayer symbols General Materials Science Reactive-ion etching Raman spectroscopy Molybdenum disulfide
Zdroj:	ACS Applied Materials & Interfaces. 7:15892-15897
ISSN:	1944-8252 1944-8244
Popis:	Two-dimensional (2D) metal dichalcogenides like molybdenum disulfide (MoS2) may provide a pathway to high-mobility channel materials that are needed for beyond-complementary metal-oxide-semiconductor (CMOS) devices. Controlling the thickness of these materials at the atomic level will be a key factor in the future development of MoS2 devices. In this study, we propose a layer-by-layer removal of MoS2 using the atomic layer etching (ALET) that is composed of the cyclic processing of chlorine (Cl)-radical adsorption and argon (Ar)(+) ion-beam desorption. MoS2 etching was not observed with only the Cl-radical adsorption or low-energy (
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::4e853feb3a176e97f23b2d8d671ce817 https://doi.org/10.1021/acsami.5b03491 Zobrazit plný text záznamu