Autor:	I. V. Ivonin, L. M. Krasil'nikova, L. G. Lavrent'eva, L. P. Porokhovnichenko
Rok vydání:	2002
Předmět:	Surface diffusion Surface (mathematics) Materials science Vapor phase General Physics and Astronomy Trapping Epitaxy Molecular physics Gallium arsenide Condensed Matter::Materials Science chemistry.chemical_compound chemistry Mass transfer Diffusion (business)
Zdroj:	Russian Physics Journal. 45:493-497
ISSN:	1064-8887
DOI:	10.1023/a:1021088522941
Popis:	Experimental proofs of asymmetric trapping of atoms at the growth step in vapor-phase epitaxy of gallium arsenide in the GaAs–AsCl3–H2 system are given. The data obtained confirm the important role of the surface diffusion mass transfer in the growth of epitaxial GaAs layers on vicinals in the neighborhood of (111)A. The effective diffusion length is estimated.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::4e7dc267be002635b9c3b36e1b5ffbe6 https://doi.org/10.1023/a:1021088522941 Zobrazit plný text záznamu Full text from SpringerLink