Power Characteristics of GaN Microwave Transistors on Silicon Substrates

Autor:	I. O. Mayboroda, M. M. Krymko, J. V. Grishchenko, S.V. Korneev, M. L. Zanaveskin, I. A. Chernykh, S.M. Romanovskiy, I. S. Ezubchenko, A. A. Andreev, V.F. Sinkevich, M. Y. Chernykh
Rok vydání:	2020
Předmět:	010302 applied physics Materials science Physics and Astronomy (miscellaneous) Silicon business.industry Transistor chemistry.chemical_element Heterojunction 02 engineering and technology Chemical vapor deposition 021001 nanoscience & nanotechnology 01 natural sciences Die (integrated circuit) Power (physics) law.invention chemistry law 0103 physical sciences Optoelectronics 0210 nano-technology business Saturation (chemistry) Voltage
Zdroj:	Technical Physics Letters. 46:211-214
ISSN:	1090-6533 1063-7850
DOI:	10.1134/s1063785020030050
Popis:	GaN heterostructures on silicon substrates have been grown by metalorganic chemical vapor deposition. Transistors with the gate periphery of 1.32 mm are designed. The saturation power of the package die at a frequency of 1 GHz was 4 and 6.3 W at supply voltages of 30 and 60 V, respectively. The maximum drain efficiency is 57%.
Databáze:	OpenAIRE
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