Photoconductivity of silicon with multicharged clusters of manganese atoms [Mn]4
| Autor: | K. S. Ayupov, S. A. Tachilin, G. Kh. Mavlonov, O. E. Sattarov, M. K. Bakhadyrkhanov, Kh. M. Iliev, S. B. Isamov |
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| Rok vydání: | 2010 |
| Předmět: |
Materials science
Silicon Infrared Photoconductivity Fermi level chemistry.chemical_element Surfaces and Interfaces Manganese Photoelectric effect Industrial and Manufacturing Engineering Surfaces Coatings and Films law.invention Nanoclusters Condensed Matter::Materials Science symbols.namesake chemistry law Physics::Atomic and Molecular Clusters symbols Atomic physics Electron paramagnetic resonance |
| Zdroj: | Surface Engineering and Applied Electrochemistry. 46:276-280 |
| ISSN: | 1934-8002 1068-3755 |
| Popis: | The features of the photoelectric properties of silicon with multicharged nanoclusters of manganese atoms are studied. The patterns of change in the multiplicity of the charge state of the nanoclusters as a function of the Fermi level position are determined. It is shown that the samples with the maximum multiplicity of the charge of the nanoclusters exhibit a number of new physical effects, i.e., anomalously high extrinsic photoconductivity within a range of 3–5 μm, giant residual conductivity, and photoconductivity stimulated by an electrical field. In samples with a minimal charge state of the nanoclusters, the effect of anomalously deep infrared quenching of the photoconductivity is observed, the quenching multiplicities of which achieve 6 or 7 orders. The laws for controlling the photoelectric properties of silicon by changing the charge state of the nanoclusters are determined. |
| Databáze: | OpenAIRE |
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