Fast tuning of 3.3 µm InAsSb/InAsSbP diode lasers using nonlinear optical effects
Autor: | Victor V. Sherstnev, N. M. Kolchanova, M. V. Stepanov, T. N. Danilova, A. N. Imenkov, A. P. Danilova, Yu. P. Yakovlev |
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Rok vydání: | 1998 |
Předmět: |
Materials science
Computer Networks and Communications business.industry Far-infrared laser Single-mode optical fiber Physics::Optics Nonlinear optics Laser Atomic and Molecular Physics and Optics Semiconductor laser theory law.invention Optics law Optoelectronics Emission spectrum Electrical and Electronic Engineering business Lasing threshold Diode |
Zdroj: | IEE Proceedings - Optoelectronics. 145:261-264 |
ISSN: | 1359-7078 1350-2433 |
Popis: | InAsSb-InAsSbP double heterostructures diode lasers for the spectral region 3.3 /spl mu/m grown by liquid phase epitaxy have been investigated. Emission spectra, far-field patterns and wavelength tuning have been studied over a wide current range from threshold value I/sub th/ up to 3I/sub th/ at the temperature of liquid nitrogen. Current-controlled wavelength tuning has been obtained both towards shorter wavelengths (to 4.56 cm/sup -1/) and towards longer wavelengths (up to 0.9 cm/sup -1/) at a temperature T=77 K, at lasing generation that maintains single mode. Comparison of the emission properties of lasers driven by different types of current (short pulse current, sawtooth pulse current and quasi-CW regime) showed the same quantum-mechanical nature of current tuning. A theoretical model of this nonlinear optical phenomenon is proposed. The estimated times of current tuning, defined mainly by the photon lifetime in the cavity, are about 10/sup -9/-10/sup -12/ s. |
Databáze: | OpenAIRE |
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