Luminescence decay kinetics of Ge related center in silica

Autor:	B. Poumellec, Anatoly N. Trukhin, J. Garapon
Rok vydání:	1999
Předmět:	Nuclear and High Energy Physics Radiation Materials science Silica fiber Kinetics Doping Time constant Physics::Optics Condensed Matter Physics Spectral line General Materials Science Atomic physics Triplet state Luminescence Excitation
Zdroj:	Radiation Effects and Defects in Solids. 149:89-95
ISSN:	1029-4953 1042-0150
DOI:	10.1080/10420159908230138
Popis:	Detailed measurements of luminescence decay kinetics in Ge doped silica fiber have been carried out for different excitation energies from 3 to 7.7 eV and luminescence detection energy from 2 to 4eV. The decay kinetics of luminescence is rather well approximated by an exponent. A distribution of time constants over the range 90–130 μs in decay exponential approximation is pointed out. This distribution is due to structural non-equivalencey of Ge centers in the disordered glass structure. At 10 K the life time increases up to 150–450 μs, and it is explained as influence of zero-field splitting of the triplet state. The spectra of luminescence and its excitation also are affected by inhomogeneous broadening. The excitation with photons above 6.4 eV causes appearance of thermally stimulated luminescence also.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::4e66c436817612288e20e017944256dc https://doi.org/10.1080/10420159908230138 Zobrazit plný text záznamu