GaAs Pixel Detectors

Autor: A. V. Tyazhev, D.Y. Mokeev, A. Zarubin, Michael Fiederle, D.L. Budnitsky, E. Hamann, Alex Fauler, G Shelkov, O.P. Tolbanov, V. A. Novikov, S. Procz
Rok vydání: 2013
Předmět:
Zdroj: MRS Proceedings. 1576
ISSN: 1946-4274
0272-9172
Popis: Results of investigation of X-ray sensors on the basis of GaAs compensated with chromium (HR GaAs) are presented in this work. HR GaAs material is shown to have the following physical parameters: the resistivity about 1GOhm*cm, the nonequilibrium charge carrier lifetime – hundreds of nanoseconds. Prototypes of microstrip and array HR GaAs sensors have been manufactured and tested. It is demonstrated that the sensors provide spatial resolution according to the pixel pitch and allow obtaining high quality X-ray images.
Databáze: OpenAIRE
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