Hydrogen related point defects in silicon based layers: Si(·)H and SiOOH
| Autor: | Karel Vacek, Sergej Naumov, Vladislav Dřínek, Zdeněk Bastl, Gleb Yuzhakov |
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| Rok vydání: | 2006 |
| Předmět: |
Materials science
Silylation Hydrogen Analytical chemistry chemistry.chemical_element Surfaces and Interfaces Condensed Matter Physics Crystallographic defect Surfaces Coatings and Films law.invention chemistry Deuterium law Materials Chemistry Fourier transform infrared spectroscopy Electron paramagnetic resonance Spectroscopy Helium |
| Zdroj: | Surface Science. 600:1462-1467 |
| ISSN: | 0039-6028 |
| DOI: | 10.1016/j.susc.2006.01.039 |
| Popis: | Layers prepared by pulsed TEA CO2 pulsed laser ablation (PLA) of SiO and SiO2 targets in helium were exposed to hydrogen and deuterium atmosphere up to several kPa. The deposited layers were investigated by FTIR, EPR and XP spectroscopy. Among various Si species silyl radical Si(·)H ( Si(·)D) at 2166 (1568) cm−1—H(I) center—and silyl hydroperoxide SiOOH ( SiOOD) at 3587 (2648) cm−1 were identified in FTIR spectra. Chemical pathways for production of these species are discussed. Experimental results are supported by quantum chemical calculations. |
| Databáze: | OpenAIRE |
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