Polarization Dependence of Pulsed Laser-Induced SEEs in SOI FinFETs
| Autor: | John A. Kozub, Kaitlyn L. Ryder, Andrew L. Sternberg, Robert A. Weller, Robert A. Reed, Huiqi Gong, Dimitri Linten, Jerome Mitard, Sharon M. Weiss, En Xia Zhang, Landen D. Ryder, Ronald D. Schrimpf |
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| Rok vydání: | 2020 |
| Předmět: |
Nuclear and High Energy Physics
Materials science Silicon 010308 nuclear & particles physics business.industry Physics::Optics Silicon on insulator chemistry.chemical_element Dielectric Polarization (waves) 01 natural sciences Wavelength Nuclear Energy and Engineering chemistry 0103 physical sciences Optoelectronics Electrical and Electronic Engineering business Nanoscopic scale Plasmon Diode |
| Zdroj: | IEEE Transactions on Nuclear Science. 67:38-43 |
| ISSN: | 1558-1578 0018-9499 |
| DOI: | 10.1109/tns.2019.2956911 |
| Popis: | Pulsed, laser-induced, single-event current measurements on silicon-on-insulator (SOI) FinFETs at subbandgap wavelength (1260 nm) are affected by the polarization of the laser light used in the experimental testing setup. Such polarization dependence is not observed during pulsed laser, single-event effects testing on large-area silicon diodes, suggesting that polarization dependence arises due to the presence of the nanoscale fin. Plasmonic enhancement is proposed as a likely mechanism for the polarization effects due to the metal/dielectric interfaces in the fin region. The observed polarization dependence has ramifications for collection and interpretation of data acquired by pulsed laser testing. Device orientation of FinFETs and other nanoscale devices during pulsed laser testing should be considered in order to ensure consistent testing conditions and reproducible measurement results across multiple measurement campaigns. |
| Databáze: | OpenAIRE |
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