The nature of boron‐oxygen lifetime‐degrading centres in silicon
| Autor: | Vladimir V. Voronkov, Robert J. Falster |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
inorganic chemicals
010302 applied physics Silicon Dimer chemistry.chemical_element 02 engineering and technology Carrier lifetime 021001 nanoscience & nanotechnology Condensed Matter Physics Boron atom 01 natural sciences Oxygen chemistry.chemical_compound Cooling rate chemistry Chemical physics 0103 physical sciences Limiting oxygen concentration 0210 nano-technology Boron |
| Zdroj: | physica status solidi c. 13:712-717 |
| ISSN: | 1610-1642 1862-6351 |
| DOI: | 10.1002/pssc.201600016 |
| Popis: | Light-induced degradation of minority carrier lifetime in silicon is caused by the formation of two B-O recombination centres: fast-stage centres (FRC) and slow-stage centres (SRC). FRC were concluded to emerge by a carrier-assisted reconfiguration of a latent BO2 defect composed of a substitutional boron atom and an oxygen dimer. The nature of SRC however remained uncertain; this defect appeared to involve an interstitial boron atom rather than a substitutional one. More recent data on SRC in boron-containing compensated p-Si and n-Si now show that the SRC actually emerge in the same way as FRC: by a reconfiguration of BO2, but from a different latent form. The two latent BO2 defects (the precursors for FRC and for SRC) are created during a cooling stage after the last high-temperature anneal, and their concentration, proportional to the boron concentration and squared oxygen concentration, depends on the cooling rate. (© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) |
| Databáze: | OpenAIRE |
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