Characteristics of Pentacene Thin Film Transistor with Al[sub 2]O[sub 3] Gate Dielectrics on Plastic Substrate
| Autor: | Hyun-Tak Kim, Jae Bon Koo, Jung Wook Lim, Sun Jin Yun |
|---|---|
| Rok vydání: | 2007 |
| Předmět: |
Electron mobility
Materials science business.industry General Chemical Engineering Gate dielectric Substrate (electronics) Subthreshold slope Pentacene Atomic layer deposition chemistry.chemical_compound chemistry Thin-film transistor Electrochemistry Optoelectronics General Materials Science Electrical and Electronic Engineering Physical and Theoretical Chemistry business Layer (electronics) |
| Zdroj: | Electrochemical and Solid-State Letters. 10:J136 |
| ISSN: | 1099-0062 |
| Popis: | Pentacene organic thin-film transistors (OTFTs) were fabricated on a polyethersulfone (PES) substrate with an Al 2 O 3 gate dielectric grown at 150°C by plasma enhanced atomic layer deposition. Due to the roughness of the Al 2 O 3 surfaces, the OTFTs with Al 2 O 3 of 150 nm showed better performance compared to that with Al 2 O 3 of 120 nm. When OTFTs with a 150 nm thick Al 2 O 3 layer were fabricated on PES substrate, excellent electrical characteristics were obtained, including carrier mobility as large as 0.62 cm 2 /V s, a subthreshold slope as low as 0.4 V/dec, and on-off current ratio as large as 10 7 . |
| Databáze: | OpenAIRE |
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