Structural properties of ZnSe films grown by migration enhanced epitaxy

Autor:	J. M. Gaines, John Petruzzello, B. Greenberg
Rok vydání:	1993
Předmět:	Materials science business.industry General Physics and Astronomy Crystal growth Substrate (electronics) Epitaxy Crystallography X-ray photoelectron spectroscopy Transmission electron microscopy Optoelectronics Thin film business Stacking fault Molecular beam epitaxy
Zdroj:	Journal of Applied Physics. 73:2835-2840
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.353035
Popis:	We describe the structural properties of ZnSe grown on (001) GaAs by migration enhanced epitaxy, and show that the heterointerface plays a significant role in determining the structural properties of the ZnSe films. Films were grown with thicknesses ranging from 900 to 10 000 A. Transmission electron microscopy and high‐resolution x‐ray diffraction measurements show that the resulting structure is highly dependent on how growth is initiated. Nearly perfect films are obtained, for thicknesses up to about 2500 A [considerably thicker than the critical thickness for molecular beam epitaxy (MBE)‐grown films], when growth begins with an initial exposure of the GaAs substrate to Zn. However, if growth begins with an initial high‐temperature Se exposure, then stacking fault densities are greatly increased, and more rapid relaxation occurs. Comparison to MBE‐grown films shows greater defect densities and a faster rate of relaxation of the misfit strain for the MBE‐grown films.
Databáze:	OpenAIRE
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