Stress Study on CrN Thin Films with Different Thicknesses on Stainless Steel
| Autor: | Di Fan, Jun Gong, Dong-Li Qi, Hao Lei, Chao-Qian Guo, Chao Sun |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science Morphology (linguistics) Metallurgy technology industry and agriculture Metals and Alloys 02 engineering and technology Substrate (electronics) Sputter deposition 021001 nanoscience & nanotechnology 01 natural sciences Industrial and Manufacturing Engineering Thermal expansion Stress (mechanics) 0103 physical sciences Deposition (phase transition) Wafer Thin film 0210 nano-technology |
| Zdroj: | Acta Metallurgica Sinica (English Letters). 31:329-336 |
| ISSN: | 2194-1289 1006-7191 |
| DOI: | 10.1007/s40195-017-0620-5 |
| Popis: | The reliability of a substrate curvature-based stress measurement method for CrN thin films on substrate with fluctuant surface was discussed. The stress error led by the ignorance of substrate thermal deformation was studied. Results showed that this error could be as large as several hundred MPa under general deposition conditions. Stress in the CrN thin films with different thicknesses ranging from 110 to 330 nm on stainless steel was studied by this method, in comparison with conventional results on silicon wafer. The thin films’ morphology and structure were investigated and related to the film stress. A significant result of the comparison is that stress evolution in the thin films on steel obviously differs from that on silicon wafer, not only because the two substrates have different coefficients of thermal expansion, which provokes thermal stress, but also the considerable discrepancy in the thin films’ grain coarsening rate and structure that induce different intrinsic stresses. |
| Databáze: | OpenAIRE |
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